Xpg Gammix S60 512Gb PCIe Gen4 x4 M.2 2280 Internal Ssd (AGAMMIXS60-512G-CS)

Model – CT1000T700SSD5SSD series – T700Interface – PCIe Gen 5.0 x4, NVMe 2.0Capacity – 1TBForm factor – M.2 (2280)SSD Endurance (TBW) – 600TBSequential Read – 11,700 MB/sSequential Write – 9,500 MB/sWarranty – 5-year limited warrantyNote – *** Features, Price, Specifications are subject to change without notice.

Model Number – ALEG-960-2TCSCapacity – 2TBForm factor – M.2 2280NAND Flash – 3D NANDController – SMI SM2264Dimensions (L x W x H) – 80 x 22 x 4.68mm / 3.15 x 0.87 x 0.18inch (with heat sink)80 x 22 x 3.38mm / 3.15 x 0.87 x 0.13inch (without heat sink)Weight – 11g / 0.39oz (with heat sink)8g / 0.28oz (without heat sink)Interface – PCIe Gen4 x4Sequential Read (Max) – Up to 7,400MB/sSequential Write (Max) – Up to 6,800MB/s4KB Random Read IOPS(Max) – Up to 750K4KB Random Write IOPS(Max) – Up to 630KOperating temperature – 0°C – 70°CStorage temperature – -40°C-85°CShock resistance – 1500G/0.5msMTBF – 2,000,000 hoursTerabytes Written (TBW) – 3,120TBWarranty – 5 YearsNote – *** Features, Price, Specifications are subject to change without notice.

Storage Form Factor – M.2Ssd Size – 4 TBStorage Type – Solid State DriveGeneral Feature – MZ-V9P4T0BWApplication – Client PCs, Game ConsolesCapacity – 4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)Form Factor – M.2 (2280)Interface – PCIe Gen 4.0 x4, NVMe 2.0Dimension – 80 x 22 x 2.3 mmWeight – Max 9.0g WeightStorage Memory – Samsung V-NAND 3-bit MLCController – Samsung in-house ControllerCache Memory – Samsung 1GB Low Power DDR4 SDRAMSpecial Feature – TRIM Support – SupportedS.M.A.R.T Support – SupportedGC (Garbage Collection) – Auto Garbage Collection AlgorithmEncryption Support – AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)WWN Support – Not supportedDevice Sleep Mode Support – YesPerformance – Sequential Read – Up to 7,450 MB/s * Performance may vary based on system hardware & configurationSequential Write – Up to 6,900 MB/s * Performance may vary based on system hardware & configurationRamdom Read (4KB, QD32) – Up to 1,600,000 IOPS * Performance may vary based on system hardware & configurationRamdom Write (4KB, QD32) – Up to 1,550,000 IOPS * Performance may vary based on system hardware & configurationRamdom Read (4KB, QD1) – Up to 22,000 IOPS * Performance may vary based on system hardware & configurationRamdom Write (4KB, QD1) – Up to 80,000 IOPS * Performance may vary based on system hardware & configurationEnvironment – Average Power Consumption – *Average: 5.5 W*Maximum: 8.5 W (Burst mode)* Actual power consumption may vary depending on system hardware & configurationPower Consumption (idle) – Max. 55 mW * Actual power consumption may vary depending on system hardware & configurationAllowable Voltage – 3.3 V ± 5 % Allowable voltageReliability – 1.5 Million Hours Reliability (MTBF)Operating Temperature – 0 – 70 ? Operating TemperatureShock – 1,500 G & 0.5 ms (Half sine)Warranty – 5-Year Limited Warranty or 2400 TBW Limited Warranty

Model – Brand – Western DigitalSeries – WD Blue SN580Model – WDS500G3B0EDevice Type – Internal Solid State Drive (SSD)Used For – ConsumerDetails – Form Factor – M.2 2280Capacity – 500GBMemory Components – TLCInterface – PCI-Express 4.0 x4Performance – Max Sequential Read – Up to 4000 MBpsMax Sequential Write – Up to 3600 MBps4KB Random Read – Up to 450,000 IOPS4KB Random Write – Up to 750,000 IOPSTerabytes Written (TBW) – 300TBMTTF – 1.5M HoursEnvironmental – Power Consumption (Idle) – PS5 (Sleep) 3.3mWPower Consumption (Active) – 6.5WOperating Temperature – 0°C ~ +85°CStorage Temperature – -40°C ~ +85°CMax Shock Resistance – 1,500G @0.5 ms half sineMax Vibration Resistance – Operating Vibration: 5 gRMS, 10-2000 Hz, 3 axesNon-operating Vibration: 4.9 gRMS, 7-800 Hz, 3 axes – Dimensions & Weight – Height – 2.38mmWidth – 22.00mmDepth – 80.00mmWeight – 0.19 oz

Specification – Model Number – WDS200T3B0EInterface – PCIe Gen4 NVMe 1.4bFormatted Capacity – 1 TBNAND Type – WDC TLCPerformance – Sequential Read (Queues = 32, Threads = 1): up to 4150 MB/sSequential Write (Queues = 32, Threads = 1): up to 4150 MB/sRandom Read 4KB IOPS (Queues = 32, Threads = 16): up to 600KRandom Write 4KB IOPS (Queues = 32, Threads = 16): up to 750KEndurance (TBW): 900Power – Average Active Power: 65mWSleep (PS5) (low power): 3.3mWSecurity – TCG Pyrite 2.01; ATA Security Passthrough over NVMeReliability – MTTF: 1.5M hoursEnvironmental – Operating Temperature: 32ºF to 185ºF (0ºC to 85ºC)Non-operating Temperature: -40ºF to 185ºF (-40ºC to 85ºC)Non-Operating Vibration: 4.9 gRMS, 7-800 Hz, 3 axesOperating Vibration: 5 gRMS, 10-2000 Hz, 3 axesShock: 1,500G @0.5 ms half sineCertifications: BSMI, CAN ICES-3(B)/NMB-3(B), CE, FCC, KCC, Morocco,RCM, TUV, UL, VCCIPhysical Dimensions M.2 2280 – Form Factor: M.2 2280-S3-M (M key, Single Side Assembly)Length: 80 ± 0.15mmWidth: 22 ± 0.15mmHeight: 2.38mmWeight: 5.5g + 0.5gWarranty – 5 Years Limited WarrantyNote* – Price, feature and specifications are subject to change without notice.

Model Name – GIGABYTE Gen4 4000E SSD 250GBModel Number – G440E250GInterface – PCI Express 4.0×4, NVMe 1.4Form Factor – M.2 2280Total Capacity – 250GBSequential Read speed – Up to 3500 MB/sSequential Write speed – Up to 1800MB/sDimension – 22 x 2.3 x 80 mmMean time between failure (MTBF) – 1.5 million hoursPower Consumption (Idle, PS3) – 50mWPower Consumption(PS4, L1.2) – 5mWTemperature (Operating) – 0°C to 70°CTemperature (Storage) – -40°C to 85°CSpecial Note – • Test system configuration: configuration may vary by models, we will choose the latest platform for verification.• Performance may vary based on SSD’s firmware version and system hardware & configuration. Sequential performance measurements based on CrystalDiskMark and IOmeter 1.1.0.• Speeds based on internal testing. Actual performance may vary.• 1GB = 1 billion bytes. Actual useable capacity may vary.Warranty – Limited 3 years or 150TBW.Note – *** Features, Price, Specifications are subject to change without notice.